MACOM Introduces GaN Bias Controller and Sequence Module
|MACOM announced a GaN bias controller and sequencer for fixed and pulsed negative gate biasing. The MABC-001000-DP000L module provides proper gate voltage and pulsed drain voltage biasing for a device under test (DUT). The module also provides bias sequencing, ensuring that the pulsed drain voltage cannot be applied to a device under test unless the negative gate bias voltage is present.
The Bias Controller module solution offers protection and dynamic control of all MACOM High-Power transistors including MACOM's broad GaN portfolio. The solution consists of two functional elements arranged vertically on the customers board to conserve size, weight and cost.
The first functional element referred to as Module 1 is patterned and populated directly onto the customer board. The second functional element, referred to as Module 2, uses the land pattern of Module 1 and interconnects vertically through Module 1. The primary function of Module 1 is drain switching, while the main function of Module 2 is to provide the customer with easy gate switching.
The device is capable of robust GaN protection at any power up/power down sequence and has a target total switch transition time of < 500 ns. It features an open drain output current of < 200 mA for an external MOSFET switch drive, gate bias output current of < 50 mA for heavy RF compression, and an internal thermistor or external temperature sensor voltage for Gate Bias Sum. The recommended approach is to utilize both module functions. The overall MABC-001000-000DPM can be co-located in heavy EMI/RFI environments with little or no extra filtering. Additional features include optional remote temperature sensing and temperature, fast Gate Switching, Remote Gate Adjust, and Buffered Multi-Gate Bias.
With 30dB typical EMI/RFI Rejection at all I/O ports, the MABC-001000-DP000L is RoHS compliant and 260 deg reflow compatible. The MABC-001000-DP000L is ideal for a DUT such as depletion-mode GaN or GaAs power amplifiers, or HEMT devices. In addition to these key applications, this device can be used for high power transistors including LDMOS, Si Bipolar and more.
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